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HIVE INF
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ARCHIVE INFORMATION
MRF6S9125MR1 MRF6S9125MBR1
7
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
Figure 7. Intermodulation Distortion Products
versus Output Power
1 30010
100
?70
?10
7th Order
Pout, OUTPUT POWER (WATTS) PEP
5th Order
3rd Order
?20
?30
?40
IMD, INTERMODULATION DISTORTION (dBc)
?50
?60
Figure 8. Intermodulation Distortion Products
versus Tone Spacing
1 10010
?60
?10
0.1
7th Order
TWO?TONE SPACING (MHz)
VDD
= 28 Vdc, P
out
= 125 W (PEP)
IDQ
= 950 mA, Two?Tone Measurements
Center Frequency = 880 MHz
5th Order
?20
?30
?40
?50
IMD, INTERMODULATION DISTORTION (dBc)
Figure 9. Pulse CW Output Power versus
Input Power
36
56
29
P3dB = 52.4 dBm (172.5 W)
Pin, INPUT POWER (dBm)
VDD
= 28 Vdc, I
DQ
= 950 mA
Pulsed CW, 8 μsec(on), 1 msec(off)
Center Frequency = 880 MHz
54
52
50
48
30 3231 3433 35
Actual
Ideal
55
53
49
51
28
P
out
, OUTPUT POWER (dBm)
Figure 10. Single-Carrier N-CDMA ACPR, ALT1, Power
Gain and Drain Efficiency versus Output Power
0?8085C
Pout, OUTPUT POWER (WATTS) AVG.
50
?30
40
?40
30
?50
20
C
?60
10
0.1 101 100 200
?70
ALT1
ηD
Gps
TC
= ?30
C
ACPR
η
D
, DRAIN EFFICIENCY (%), G
ps
, POWER GAIN (dB)
VDD= 28 Vdc, IDQ
= 950 mA
f = 880 MHz, N?CDMA IS?95 (Pilot
Sync, Paging, Traffic Codes 8
Through 13)
ALT1, CHANNEL POWER (dBc)
ACPR, ADJACENT CHANNEL POWER RATIO (dBc)
3rd Order
?30C
P1dB = 51.5 dBm (139.3 W)
25C
85
25C
?30C
25C
25C
85C
VDD
= 28 Vdc, I
DQ
= 950 mA
f1 = 880 MHz, f2 = 880.1 MHz
Two?Tone Measurements, Center Frequency = 880 MHz
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